Method of forming interlayer insulating film

ABSTRACT

A material containing, as a main component, an organic silicon compound represented by the following general formula: 
     R 1   x Si(OR 2 ) 4−x   
     (where R 1  is a phenyl group or a vinyl group; R 2  is an alkyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing an organic component. As the organic silicon compound where R 1  is a phenyl group, there can be listed phenyltrimethoxysilane or diphenyldimethoxysilane. As the organic silicon compound where R 1  is a vinyl group, there can be listed vinyltrimethoxysilane or divinyldimethoxysilane.

BACKGROUND OF THE INVENTION

[0001] The present invention relates to a method of forming aninterlayer insulating film in a semiconductor device.

[0002] Known interlayer insulating films formed in semiconductor devicesinclude a silicon oxide film, a silicon oxide film composed of anorganic SOG (Spin-On-Glass) containing an organic component, and anorganic polymer film.

[0003] In general, an interlayer insulating film formed in asemiconductor device is required to have a sufficiently low dielectricconstant to achieve lower wiring capacitance and sufficiently high heatresistance to withstand a semiconductor manufacturing process.

[0004] With the increasing miniaturization of an LSI formed on asemiconductor substrate, wiring capacitance which is parasiticcapacitance between metal wires has remarkably increased, while degradedperformance of the LSI due to a wiring delay caused thereby haspresented a serious problem. The wiring capacitance is determined by thesize of a space between the metal wires and by the magnitude of thedielectric constant of an interlayer insulating film present in thespace. To reduce the wiring capacitance, therefore, it is important toreduce the dielectric constant of the interlayer insulating film.

[0005] If an interlayer insulating film with low heat resistance isused, a thermal treatment at about 400° C. performed in a semiconductormanufacturing process will soften the interlayer insulating film andundulate wiring, which may cause a fatal failure such as a disconnectionor short circuit. This is why the interlayer insulating film is requiredto have sufficiently high heat resistance to withstand the thermaltreatment at about 400° C.

[0006] Since an interlayer insulating film composed of a silicon oxidefilm has an undesirably high dielectric constant, there has beenproposed a fluorine-doped silicon oxide film made of silicon oxide dopedwith fluorine. Although the dielectric constant of the fluorine-dopedsilicon oxide film has been lowered by bonding a fluorine atom havinglow polarizability to a silicon atom composing the oxide film, themoisture absorbing property thereof increases with an increase in theamount of fluorine added thereto, so that a minimum dielectric constantattainable is about 3.5. Hence, it is difficult to use silicon oxidefilms including the fluorine-doped silicon oxide film as interlayerinsulating films in an extremely miniaturized LSI.

[0007] In place of silicon oxide films, the use of an organic SOG filmor organic polymer film as an interlayer insulating film in an extremelyminiaturized LSI is under consideration because of its low dielectricconstant.

[0008] The organic SOG film is formed by thermally curing a solutioncontaining silica or siloxane each having an organic component such as amethyl group or a phenyl group. Since the organic component remains inthe film even after thermal curing, a low dielectric constant of about3.0 is attained.

[0009] As a first conventional embodiment, a method of forming aninterlayer insulating film composed of an organic SOG film will bedescribed with reference to FIGS. 6(a) to 6(d).

[0010] First, as shown in FIG. 6(a), first-level metal wires 2 areformed on a semiconductor substrate 1, followed by a first silicon oxidefilm 3 formed over the entire surface of the semiconductor substrate 1including the first-level metal wires 2 by plasma CVD using a gasmixture of, e.g., tetraethoxysilane and oxygen as a raw material.Thereafter, an organic SOG agent is applied onto the first silicon oxidefilm 3 by spin coating and thermally cured to form an organic SOG film4.

[0011] Then, as shown in FIG. 6(b), the entire surface of the organicSOG film 4 is etched back such that the portions thereof overlying thefirst-level metal wires 2 are removed.

[0012] Next, as shown in FIG. 6(c), a second silicon oxide film 5 isformed over the entire surface of the silicon oxide film 3 including theremaining organic SOG film 4 by, e.g.; plasma CVD using a gas mixtureof, e.g., tetraethoxysilane and oxygen as a raw material.

[0013] Next, as shown in FIG. 6(d), contact holes are formed in thefirst and second silicon oxide films 3 and 5 by using a resist patternas a mask, which is then removed by using an oxygen plasma.Subsequently, a metal material is filled in the contact holes to formcontacts. After that, second-level metal wires 7 are formed on thesecond silicon oxide film 5, resulting in a structure having aninterlayer insulating film consisting of the first silicon oxide film 3,the organic SOG film 4, and the second silicon oxide film 5 between thefirst- and second-level metal wires 2 and 7.

[0014] As a second conventional embodiment, a method of forming aninterlayer insulating film composed of a fluorinated amorphous carbonfilm, which is an organic polymer film, will be described. As disclosedin a technical report (Extended Abstracts of the 1995 InternationalConference on Solid State Devices and Materials, Osaka, 1995, pp.177-179), a fluorinated amorphous carbon film is formed by plasma CVDusing, as a raw material, a mixture of a hydrocarbon-based componentsuch as CH₄ and a fluorine-containing component such as CF₄.

[0015] After the gas mixture is introduced into a reaction chamber of aparallel-plate plasma CVD apparatus, the pressure inside the reactionchamber is held at several hundreds of Torr. When RF power on the orderof 100 to 300 W at 13.56 MHz is applied to parallel-plate electrodes inthe reaction chamber, the gas mixture is partially decomposed togenerate monomers, ions, and radicals, which undergo plasmapolymerization, resulting in a fluorinated amorphous carbon film as aplasma polymerization film deposited on a semiconductor substrate. Thefluorinated amorphous carbon film thus formed has a low dielectricconstant of 2.0 to 2.5 immediately after deposition.

[0016] However, since the foregoing organic SOG film is formed byrepeatedly performing the steps of applying the organic SOG agent andthermally curing the applied organic SOG agent several times, it has thedisadvantages of poor film formability resulting from a large amount oftime required by the formation of the organic SOG film and high costresulting from the major portion of the agent wasted during the spincoating.

[0017] In the case where the etch-back process, as illustrated in FIG.6(b), is not performed with respect to the entire surface of the organicfilm 4 before contact holes are formed in the organic SOG film 4 and inthe first silicon oxide film 3 by using the resist pattern as a mask,which is then removed by using an oxygen plasma, and contacts are formedby filling the metal material in the contact holes, the followingproblems arise. In the step of removing the resist pattern by using theoxygen plasma, SiCH₃ contained in the organic SOG films 4 exposed at thesidewalls of the contact holes reacts with the oxygen plasma to generateSiOH, which is condensed by dehydration to generate H₂O in the step offilling the metal material in the contact holes. The resulting H₂Ocauses the oxidization and contamination of the metal forming thecontacts, leading to faulty conduction at a contact.

[0018] As for the organic polymer film composed of the fluorinatedamorphous carbon film, it has the advantage of an extremely lowdielectric constant over the organic SOG film but is inferior thereto inheat resistance because of its low glass transition temperature. Whenthe conventional fluorinated amorphous carbon film is subjected to athermal treatment at a temperature of 300° C. or more, the thickness ofthe film is significantly reduced, while the dielectric constant thereofis greatly increased. For example, if a fluorinated amorphous carbonfilm made from CH₄ and CF₄ and having a dielectric constant of 2.2immediately after deposition is subjected to a thermal treatment at atemperature of 300° C. for 1 hour, the film contracts till the thicknessthereof is reduced to about 65% of the original thickness immediatelyafter deposition, which is a 35% reduction, while the dielectricconstant thereof is increased to about 2.8.

[0019] It is to be noted that the foregoing problems are not limited tothe interlayer insulating film formed between upper and lowermetallization layers but also arise in an interlayer insulating filmbetween metal wires included in a single metallization layer.

SUMMARY OF THE INVENTION

[0020] In view of the foregoing, a first object of the present inventionis to improve the film formability, cost efficiency, and processabilityof an interlayer insulating film composed of an organic SOG film. Asecond object of the present invention is to improve the heat resistanceof an interlayer insulating film composed of an organic polymer film. Toattain the first object, there is provided a first method of forming aninterlayer insulating film of the present invention, wherein a materialcontaining, as a main component, an organic silicon compound representedby the following general formula:

R¹ _(x)Si(OR²)_(4−x)

[0021] (where R¹ is a phenyl group or a vinyl group; R² is an alkylgroup; and x is an integer of 1 to 3) is caused to undergo plasmapolymerization or react with an oxidizing agent to form an interlayerinsulating film composed of a silicon oxide film containing an organiccomponent.

[0022] In accordance with the first method of forming an interlayerinsulating film, since the resulting interlayer insulating filmcontains, as a main component, the organic silicon compound representedby the following general formula:

R¹ _(x)Si(OR²)_(4−x)

[0023] (where R¹ is a phenyl group or a vinyl group; R² is an alkylgroup; and x is an integer of 1 to 3) or by the following generalformula:

R ¹ _(x)SiH_(4−x)

[0024] (where R¹ is a phenyl group or a vinyl group; and x is an integerof 1 to 3), the proportion of SiCH₃ contained in the interlayerinsulating film is much lower than contained in a conventional organicSOG film, though the dielectric constant thereof is equal to that of theconventional organic SOG film. Accordingly, even when the interlayerinsulating film is exposed to an oxygen plasma, only a small amount ofSiOH is generated and the dehydration condensation of SiOH does notoccur in the step of filling a metal material in contact holes. As aresult, H₂O is not generated and hence the problem of faulty conductionat a contact does not occur.

[0025] Moreover, since the silicon oxide film containing the organiccomponent is formed by causing the material containing the organicsilicon compound as the main component to undergo plasma polymerizationor react with an oxidizing agent in accordance with the first method offorming an interlayer insulating film, it is no more necessary toperform the steps of applying an organic SOG agent and curing theapplied organic SOG agent, resulting in excellent film formability.

[0026] In the first method of forming an interlayer insulating film, theorganic silicon compound represented by the general formula: R¹_(x)Si(OR²)_(4−x) is preferably phenyltrimethoxysilane ordiphenyldimethoxysilane and the organic silicon compound represented bythe general formula: R¹ _(x)SiH_(4−x) is preferably phenylsilane ordiphenylsilane.

[0027] In the first method of forming an interlayer insulating film, theorganic silicon compound represented by the general formula: R¹_(x)Si(OR²)_(4−x) is preferably vinyltrimethoxysilane ordivinyldimethoxysilane and the organic silicon compound represented bythe general formula: R¹ _(x)SiH_(4−x) is preferably vinylsilane ordivinylsilane.

[0028] To attain the second object, there is provided a second method offorming an interlayer insulating film according to the presentinvention, wherein a material containing, as a main component, afluorinated carbon compound having two or more double bonds of carbonatoms in a molecule thereof is caused to undergo plasma polymerizationto form an interlayer insulating film composed of a fluorinatedamorphous carbon film.

[0029] In accordance with the second method of forming an interlayerinsulating film, since the fluorinated carbon compound has two or moredouble bonds of carbon atoms in a molecule thereof, radicals each havingthree or more unoccupied bonds are likely to be generated when thefluorinated carbon compound is decomposed by a plasma. These radicalspromote three-dimensional polymerization and ensure three-dimensionalbonding in polymer composing the plasma polymerization film, whichpositively increases the crosslinking density and glass transitiontemperature of the resulting interlayer insulating film, so that theheat resistance thereof is remarkably improved. In the second method offorming an interlayer insulating film, the fluorinated carbon compoundis preferably composed only of carbon atoms and fluorine atoms. Thisprevents the plasma polymerization film from containing hydrogen, sothat the dielectric constant of the resulting interlayer insulating filmis lowered.

[0030] In this case, the fluorinated carbon compound is more preferablyhexafluoro-1,3-butadiene.

[0031] To attain the second object, there is provided a third method offorming an interlayer insulating film according to the presentinvention, wherein a material containing, as a main component, afluorinated carbon compound having a triple bond of carbon atoms in amolecule thereof is caused to undergo plasma polymerization to form aninterlayer insulating film composed of a fluorinated amorphous carbonfilm.

[0032] In accordance with the third method of forming an interlayerinsulating film, since the fluorinated carbon compound has a triple bondof carbon. atoms in a molecule thereof, radicals each having three ormore unoccupied bonds are likely to be generated when the fluorinatedcarbon compound is decomposed by a plasma. These radicals promotethree-dimensional polymerization and ensure three-dimensional bonding inpolymer composing the plasma polymerization film, which positivelyincreases the crosslinking density and glass transition temperature ofthe resulting interlayer insulating film, so that the heat resistancethereof is remarkably improved.

[0033] In the third method of forming an interlayer insulating film, thefluorinated carbon compound is preferably composed only of carbon atomsand fluorine atoms. This prevents the plasma polymerization film fromcontaining hydrogen, so that the dielectric constant of the resultinginterlayer insulating film is lowered.

[0034] In this case, the fluorinated carbon compound is more preferablyhexafluoro-2-butyne.

[0035] To attain the second object, there is provided a fourth method offorming an interlayer insulating film according to the presentinvention, wherein a material containing, as a main component, afluorinated carbon compound having a polycyclic structure in a moleculethereof is caused to undergo plasma polymerization to form an interlayerinsulating film composed of a fluorinated amorphous carbon film.

[0036] In accordance with the fourth method of forming an interlayerinsulating film, since the fluorinated carbon compound has a polycyclicstructure in a molecule thereof, radicals each having three or moreunoccupied bonds are likely to be generated when the fluorinated carboncompound is decomposed by a plasma. These radicals promotethree-dimensional polymerization and ensure three-dimensional bonding inpolymer composing the plasma polymerization film, which positivelyincreases the crosslinking density and glass transition temperature ofthe resulting interlayer insulating film, so that the heat resistancethereof is remarkably improved.

[0037] In the-fourth method of forming an interlayer insulating film,the fluorinated carbon compound is preferably composed only of carbonatoms and fluorine atoms. This prevents the plasma polymerization filmfrom containing hydrogen, so that the dielectric constant of theresulting interlayer insulating film is lowered.

[0038] In the fourth method of forming an interlayer insulating film,the fluorinated carbon compound preferably has a condensed cyclicstructure in the molecule thereof. This increases the likelihood thatradicals each having three or more unoccupied bonds are generated, sothat the crosslinking density of the resulting interlayer insulatingfilm is further increased, resulting in higher heat resistance thereof.

[0039] In this case, the fluorinated carbon compound is more preferablyperfluorodecalin, perfluorofluorene, orperfluoro(tetradecahydrophenanthrene).

[0040] In a fifth method of forming an interlayer insulating filmaccording to the present invention, a material containing, as a maincomponent, a gas mixture of an organic silicon compound composed of acompound represented by the following general formula:

R¹ _(x)Si(OR²)_(4−x)

[0041] (where R¹ is a phenyl group or a vinyl group; R² is an alkylgroup; and x is an integer of 1 to 3) or of a siloxane derivative and afluorinated carbon compound is caused to undergo plasma polymerizationor react with an oxidizing agent to form an interlayer insulating filmcomposed of a silicon oxide film containing a fluorinated carbon.

[0042] In accordance with the fifth method of forming an interlayerinsulating film, the silicon oxide film containing a fluorinated carbonis formed by causing the material containing, as the main components,the organic silicon compound and the fluorinated carbon compound toundergo plasma polymerization or react with the oxidizing agent so thatthe resulting interlayer insulating film contains the organic siliconcompound and the fluorinated carbon compound, which significantly lowersthe dielectric constant of the interlayer insulating film. Moreover,since the steps of applying the organic SOG agent and curing the appliedorganic SOG agent, which have been necessary to form the conventionalorganic SOG film, are no more necessary, similarly to the first methodof forming an interlayer insulating film, excellent film formability isachieved.

[0043] In a sixth method of forming an interlayer insulating filmaccording to the present invention, a material containing, as a maincomponent, a gas mixture of an organic silicon compound and afluorinated carbon compound having two or more double bonds of carbonatoms in a molecule thereof is caused to undergo plasma polymerizationor react with an oxidizing agent to form an interlayer insulating filmcomposed of a silicon oxide film containing a fluorinated carbon.

[0044] In accordance with the sixth method of forming an interlayerinsulating film, the silicon oxide film containing a fluorinated carbonis formed by causing the material containing, as the main component, thegas mixture of the organic silicon compound and the fluorinated carboncompound to undergo plasma polymerization or react with the oxidizingagent, so that the resulting interlayer insulating film contains theorganic silicon compound and the fluorinated carbon compound, whichsignificantly lowers the dielectric constant of the interlayerinsulating film. Moreover, since the fluorinated carbon compound has twoor more double bonds of carbon atoms in a molecule thereof, similarly tothe second method of forming an interlayer insulating film, radicalseach having three or more unoccupied bonds are likely to be generatedwhen the fluorinated carbon compound is decomposed by a plasma. Theseradicals promote three-dimensional polymerization and allow theformation of a silicon oxide film containing a fluorinated carbon with ahigh crosslinking density and excellent heat resistance.

[0045] In a seventh method of forming an interlayer insulating filmaccording to the present invention, a material containing, as a maincomponent, a gas mixture of an organic silicon compound and afluorinated carbon compound having a triple bond of carbon atoms in amolecule thereof is caused to undergo plasma polymerization or reactwith an oxidizing agent to form an interlayer insulating film composedof a silicon oxide film containing a fluorinated carbon.

[0046] In accordance with the seventh method of forming an interlayerinsulating film, the silicon oxide film containing a fluorinated carbonis formed by causing the material containing, as the main component, thegas mixture of the organic silicon compound and the fluorinated carboncompound to undergo plasma polymerization or react with the oxidizingagent, so that the resulting interlayer insulating film contains theorganic silicon compound and the fluorinated carbon compound, whichsignificantly lowers the dielectric constant of the interlayerinsulating film. Moreover, since the fluorinated carbon compound has atriple bond of carbon atoms in a molecule thereof, similarly to thethird method of forming an interlayer insulating film, radicals eachhaving three or more unoccupied bonds are likely to be generated whenthe fluorinated carbon compound is decomposed by a plasma. Theseradicals promote three-dimensional polymerization and allow theformation of a silicon oxide film containing a fluorinated carbon with ahigh crosslinking density and excellent heat resistance.

[0047] In an eighth method of forming an interlayer insulating filmaccording to the present invention, a material containing, as a maincomponent, a gas mixture of an organic silicon compound and afluorinated carbon compound having a polycyclic structure is caused toundergo plasma polymerization or react with an oxidizing agent to forman interlayer insulating film composed of a silicon oxide filmcontaining a fluorinated carbon.

[0048] In accordance with the eighth method of forming an interlayerinsulating film, the silicon oxide film containing a fluorinated carbonis formed by causing the material containing, as the main component, thegas mixture of the organic silicon compound and the fluorinated carboncompound to undergo plasma polymerization or react with the oxidizingagent, so that the resulting interlayer insulating film contains theorganic silicon compound and the fluorinated carbon compound, whichsignificantly lowers the dielectric constant of the interlayerinsulating film. Moreover, since the fluorinated carbon compound has apolycyclic structure in a molecule thereof, similarly to the fourthmethod of forming an interlayer insulating film, radicals each havingthree or more unoccupied bonds are likely to be generated when thefluorinated carbon compound is decomposed by a plasma. These radicalspromote three-dimensional polymerization and allow the formation of asilicon oxide film containing a fluorinated carbon with a highcrosslinking density and excellent heat resistance.

[0049] In the sixth to eighth methods of forming an interlayerinsulating film, the organic silicon compound is composed of a compoundrepresented by the following general formula:

R¹ _(x)Si(OR²)_(4−x)

[0050] (where R¹ is a phenyl group or a vinyl group; R² is an alkylgroup; and x is an integer of 1 to 3) or of a siloxane derivative. Thisimproves the film formability, dielectric constant, and heat resistanceof the resulting interlayer insulating film.

BRIEF DESCRIPTION OF THE DRAWINGS

[0051]FIG. 1 is a schematic view of a plasma CVD apparatus for use in amethod of forming an interlayer insulating film according to each of theembodiments of the present invention;

[0052] FIGS. 2(a) to 2(d) are cross-sectional views illustratingindividual process steps in accordance with a first method ofmanufacturing a semiconductor device to which the method of forming aninterlayer insulating film according to each of the embodiments of thepresent invention is applied;

[0053] FIGS. 3(a) to 3(d) are cross-sectional views illustratingindividual process steps in accordance with a second method ofmanufacturing a semiconductor device to which the method of forming aninterlayer insulating film according to each of the embodiments of thepresent invention is applied;

[0054]FIG. 4 shows the result of analysis when Fourier transforminfrared spectroscopy was performed with respect to an interlayerinsulating film according to the first embodiment and a conventionalorganic SOG film;

[0055]FIG. 5 shows the result of analysis when Fourier transforminfrared spectroscopy was performed with respect to interlayerinsulating films according to the first embodiment, which had undergoneno thermal treatment, a thermal treatment at 450° C., and a thermaltreatment at 500° C.; and

[0056] FIGS. 6(a) to 6(d) are cross-sectional views illustratingindividual process steps in accordance with a conventional method offorming an interlayer insulating film.

DETAILED DESCRIPTION OF THE INVENTION

[0057] Referring now to FIG. 1, a description will be given first to aCVD apparatus for use in a method of forming an interlayer insulatingfilm according to each of the embodiments of the present invention,which will be described later.

[0058]FIG. 1 schematically shows the structure of a parallel-plateplasma CVD apparatus. As shown in the drawing, a semiconductor substrate12 made of silicon and a sample stage 13, which is to serve as a lowerelectrode, are disposed in a hermetic reaction chamber 11. The samplestage 13 is connected to a, first RF power source 15 or to the groundvia a change-over switch 14 . The sample stage 13 is internally providedwith a heater (not shown) for heating the semiconductor substrate 12placed on the sample stage 13 to a specified temperature. In a positionopposing the sample stage 13 in the reaction chamber 11, there isprovided a shower head 16, which is to serve as an upper electrode. Theshower head 16 is connected to a second RF power source 17 for supplyingRF power at 13.56 MHz.

[0059] The reaction chamber 11 is provided with first, second, and thirdgas supply lines 21, 22, and 23 for introducing a gas into the reactionchamber 11. The first gas supply line 21 is provided with a firstcontainer 24 for containing a liquid raw material therein. When thefirst container 24 is supplied with carrier gas at a flow ratecontrolled by a mass flow controller (not shown), the bubbled gas isintroduced from the first container 24 into the reaction chamber 11. Thesecond gas supply line 22 is provided with a second container 25 forcontaining a liquid raw material therein. When the second container 25is supplied with carrier gas at a flow rate controlled by a mass flowcontroller (not shown), the bubbled gas is introduced from the secondcontainer 25 into the reaction chamber 11. Since the reaction chamber 11is connected to a vacuum pump 26, the reaction chamber 11 can beevacuated by driving the vacuum pump 26 so that the gases are exhaustedfrom the reaction chamber 11.

[0060] Below, a first method of manufacturing a semiconductor device towhich the method of forming an interlayer insulating film according toeach of the embodiments of the present invention is applied will bedescribed with reference to FIGS. 2(a) to 2(d).

[0061] First, as shown in FIG. 2(a), first metal wires 101 made of,e.g., aluminum are formed on a semiconductor substrate 100. Then, asshown in FIG. 2(b), an interlayer insulating film 102 is deposited overthe semiconductor substrate 100 including the first metal wires 101. Asfor a method of forming the interlayer insulating film 102, it will bedescribed later.

[0062] Next, as shown in FIG. 2(c), the interlayer insulating film 102is subjected to planarization. Thereafter, as shown in FIG. 2(d), acontact 103 is formed in the interlayer insulating film 102, followed bysecond metal wires 104 made of, e.g., aluminum which are formed on theinterlayer insulating film 102.

[0063] Below, a second method of manufacturing a semiconductor device towhich the method of forming an interlayer insulating film according toeach of the embodiments of the present invention will be described withreference to FIGS. 3(a) to 3(d).

[0064] First, as shown in FIG. 3(a), a first silicon nitride film 201, afirst interlayer insulating film 202, a second silicon nitride film 203,and a second interlayer insulating film 204 are sequentially depositedon a semiconductor substrate 200. As for a method of forming the firstand second interlayer insulating films 202 and 204, it will be describedlater.

[0065] Next, as shown in FIG. 3(b), the second silicon nitride film 203and the second interlayer insulating film 204 are patterned byphotolithography to form openings 205 for forming a wiring pattern.Then, the first silicon nitride film 201 and the first interlayerinsulating film 202 are patterned by photolithography to form openingsfor contacts. In this case, the second silicon nitride film 203 servesas an etching stopper against etching performed with respect to thesecond interlayer insulating film 204, while the first silicon nitridefilm 201 serves as an etching stopper against etching performed withrespect to the first interlayer insulating film 202.

[0066] Next, as shown in FIG. 3(c), a metal film 207 made of, e.g.,copper is deposited over the entire surface of the semiconductorsubstrate 200 by sputtering or CVD and caused to reflow by a thermaltreatment to be filled in the openings 205 for forming a wiring patternand in the openings 206 for contacts.

[0067] The metal film 207 is then subjected to CMP to form metal wires208 and contacts 209 as shown in FIG. 3(d), resulting in buried wiringhaving a dual damascene structure.

[0068] (First Embodiment)

[0069] An interlayer insulating film according to a first embodiment isa plasma polymerization film formed by inducing plasma polymerization ofa material containing, as a main component, phenyltrimethoxysilane whichis an organic silicon compound represented by the following generalformula:

R¹ _(x)Si(OR²)_(4−x)

[0070] (where R¹ is a phenyl group or a vinyl group; R² is an alkylgroup; and x is an integer of 1 to 3).

[0071] A description will be given to a method of forming the interlayerinsulating film according to the first embodiment.

[0072] First, the semiconductor substrate 12 is placed on the samplestage 13 heated to, e.g., 400° C. and grounded by the change-over switch14 and then the reaction chamber 11 is evacuated by the vacuum pump 26.

[0073] Next, phenyltrimethoxysilane represented by the followingChemical Formula 1:

[0074] is contained in the first container 24, while carrier gascomposed of, e.g., argon is supplied at a flow rate of 480 cc/min to thefirst container 24 so that bubbled phenyltrimethoxysilane is introducedinto the reaction chamber 11.

[0075] Next, the pressure inside the reaction chamber 11 is set to about1.0 Torr and RF power of 250 W at a frequency of 13.56 MHz is appliedfrom the second RF power source 17 to the shower head 16 serving as theupper electrode. During the process, phenyltrimethoxysilane gas ispartially decomposed to generate monomers, ions, and radicals asdecomposition products, which are polymerized to form the interlayerinsulating film made of the plasma polymerization film on thesemiconductor substrate 12. The structure of the plasma polymerizationfilm is diagrammatically shown by the following Chemical Formula 2:

[0076] Since the interlayer insulating film according to the firstembodiment is formed by plasma CVD, it is unnecessary to repeatedlyperform the steps of applying the organic SOG agent and thermally curingthe applied SOG agent several times, resulting in improved filmformability and lower cost.

[0077] In addition, since the interlayer insulating film according tothe first embodiment contains SiCH₃ in an amount much smaller than inthe conventional organic SOG film, a minimum amount of SiOH is generatedeven when the interlayer insulating film is etched by using an oxygenplasma. Consequently, the step of filling metal in contact holes is freefrom the phenomenon that SiOH is condensed by dehydration to generateH₂O and cause faulty conduction at a contact.

[0078]FIG. 4 shows the result of analysis when Fourier transforminfrared spectroscopy (hereinafter referred to as FT-IR) was performedwith respect to the interlayer insulating film according to the firstembodiment and to the conventional organic SOG film. In contrast to thespectrum obtained from the conventional organic SOG film which exhibitsa distinct peak of absorbance in the vicinity of a wave number of 1300cm⁻¹, the spectrum obtained from the interlayer insulating filmaccording to the first embodiment exhibits only a small peak ofabsorbance in the vicinity of a wave number of 1300 cm⁻¹, whichindicates that the interlayer insulating film according to the firstembodiment contains a smaller amount of SiCH₃ than the conventionalorganic SOG film.

[0079]FIG. 5 shows the result of analysis when FT-IR was performed withrespect to interlayer insulating films which had undergone no thermaltreatment, a thermal treatment at 450° C. in a nitrogen atmosphere, anda thermal treatment at 500° C. in a nitrogen atmosphere. Since nodifference is observed between the FT-IR spectra obtained from theinterlayer insulating films with no thermal treatment and with thethermal treatments at 450° C. and 500° C., it will be understood thatthe interlayer insulating film according to the first embodiment hassufficiently high heat resistance to withstand an LSI manufacturingprocess.

[0080] The dielectric constant of the interlayer insulating filmaccording to the first embodiment was about 3.0. After the interlayerinsulating film was allowed to stand at room temperature for about 2weeks, the dielectric constant thereof was measured again to be about3.1. This indicates that the interlayer insulating film according to thefirst embodiment has stable film quality scarcely varying with time.

[0081] The density of leakage currents was also measured to be about4.5×10⁻⁸ A/cm² at 5 MV/cm, which was satisfactory.

[0082] Although the pressure inside the reaction chamber 11 has been setto about 1.0 Torr, it is not limited thereto but may be set at any valuewithin the range of 100 mTorr to 20 Torr. More preferably, the pressureinside the reaction chamber 11 is within the range of 0.5 to 5.0 Torr.

[0083] Although the semiconductor substrate 12 has been heated to 400°C., it is not limited thereto but may be heated to any temperaturewithin the range of 25 to 500° C. If the semiconductor substrate 12 isheated to a temperature over 400° C., however, aluminum composing themetal wires formed on the semiconductor substrate 12 will lose heatresistance, so that the semiconductor substrate 12 is preferably heatedto a temperature equal to or lower than 400° C. If the temperature ofthe semiconductor substrate 12 is less than 200° C., on the other hand,an undesired component may be contained in the interlayer insulatingfilm being formed, so that the semiconductor substrate 12 is preferablyheated to a temperature of 200° C. or more.

[0084] The RF power applied to the shower head 16 as the upper electrodemay have any value within the range of 100 to 1000 W. More preferably,the RF power has a value within the range of 250 to 500 W.

[0085] As compounds represented by the foregoing general formula: R¹_(x)Si(OR²)_(4−x) where R¹ is a phenyl group, there can be listeddiphenyldimethoxysilane (Ph₂—Si—(OCH₃)₂) in addition tophenyltrimethoxysilane. As compounds represented by the foregoinggeneral formula: R¹ _(x)Si(OR²)_(4−x) where R¹ is a vinyl group, therecan be listed vinyltrimethoxysilane (CH₂═CH—Si—(OCH₃)₃) anddivinyldimethoxysilane ((CH₂═CH)₂—Si—(OCH₃)₂).

[0086] Although the first embodiment has formed the interlayerinsulating film composed of the plasma polymerization film by causingthe material having, as a main component, an organic silicon compoundrepresented by the general formula:

R¹ _(x)Si(OR²)_(4−x)

[0087] to undergo plasma polymerization, the interlayer insulating filmmay also be formed by causing the material having, as a main component,an organic silicon compound represented by the following generalformula:

R¹ _(x)SiH_(4−x)

[0088] (where R¹ is a phenyl group or a vinyl group; and x is an integerof 1 to 3) to undergo plasma polymerization or by causing the materialhaving, as a main component, an organic silicon compound represented bythe forgoing general formula:

R¹ _(x)Si(OR²)_(4−x)

[0089] or by the foregoing general formula:

R¹ _(x)SiH_(4−x)

[0090] to react with an oxidizing agent made of, e.g., O₂ or H₂O. Inthis case, O₂ gas, H₂O gas, or the like is introduced into the reactionchamber 11 through the third gas supply line 23 in the CVD apparatusshown in FIG. 1.

[0091] As compounds represented by the foregoing general formula: R¹_(x)SiH_(4−x) where R₁ is a phenyl group, there can be listedphenylsilane and diphenylsilane. As compounds represented by theforegoing general formula: R¹ _(x)SiH_(4−x) where R₁ is a vinyl group,there can be listed vinylsilane or divinylsilane.

[0092] (Second Embodiment)

[0093] An interlayer insulating film according to a second embodiment isa fluorinated amorphous carbon film formed by inducing plasmapolymerization of a material having, as a main component,1,1,1,3,3-pentafluorpropene which is a fluorinated carbon compoundhaving a double bond of carbon atoms in a molecule thereof andcontaining a hydrogen atom.

[0094] A description will be given to a method of forming the interlayerinsulating film according to the second embodiment.

[0095] First, the semiconductor substrate 12 is placed on the samplestage 13 grounded by the change-over switch 14 and then the reactionchamber 11 is evacuated by the vacuum pump 26 .

[0096] Next, 1,1,1,3,3-pentafluoropropene is contained in the firstcontainer 24, while carrier gas composed of, e.g., argon is supplied ata flow rate of 50 to 500 sccm to the first container 24 so that bubbled1,1,1,3,3-pentafluoropropene is introduced into the reaction chamber 11.

[0097] After the pressure inside the reaction chamber 11 is set to 100to 500 mTorr, RW power of 100 to 500 W at a frequency of 13.56 MHz isapplied from the second RF power source 17 to the shower head 16 servingas the upper electrode. During the process, 1,1,1,3,3-pentafluoropropenegas is partially decomposed to generate monomers, ions, and radicals asdecomposition products, which are polymerized to form the interlayerinsulating film made of the plasma polymerization film on thesemiconductor substrate 12.

[0098] Since the plasma polymerization film contains1,1,1,3,3-pentaflouropropene as a main component, the interlayerinsulating film composed thereof was a fluorinated amorphous carbon filmcontaining a carbon atom, a fluorine atom, and a hydrogen atom. Thefluorinated amorphous carbon film had a dielectric constant of 2.5immediately after deposition.

[0099] Since the plasma polymerization film is formed from ions andradicals which are decomposition products resulting from thedecomposition of the gas in the plasma and have reacted on thesemiconductor substrate 12, the properties of the decomposition productspresent in the plasma deeply influence the structure of the plasmapolymerization film. Moreover, the heat resistance of the plasmapolymerization film is closely related to the crosslinking densitythereof, which determines the structure of the plasma polymerizationfilm.

[0100] In a conventional plasma polymerization film composed of afluorinated amorphous carbon film, bonding in polymer composing theplasma polymerization film is linear and one-dimensional so that theglass transition temperature thereof is low, which may account for poorheat resistance.

[0101] In the interlayer insulating film according to the secondembodiment, by contrast, bonding in polymer composing the plasmapolymerization film tends to be three-dimensional, so that thecrosslinking density and glass transition temperature thereof becomehigh, resulting in excellent heat resistance. Specifically, since1,1,1,3,3-pentafluoropropene has a double bond of carbon atoms in amolecule thereof, decomposition products resulting from thedecomposition of 1,1,1,3,3-pentaflouropropene in the plasma are likelyto undergo a crosslinking reaction during the formation of the plasmapolymerization film on the semiconductor substrate 12.

[0102] Accordingly, the resulting plasma polymerization film has a highglass transition temperature and excellent heat resistance.

[0103] To evaluate the heat resistance of the interlayer insulating filmaccording to the second embodiment, the semiconductor substrate 12formed with the fluorinated amorphous carbon film according to thesecond embodiment was held at a temperature of 400° C. in vacuum for 1hour. The thickness and dielectric constant of the fluorinated amorphouscarbon film were then measured, with the result that a reduction in filmthickness was only about 6% and an increase in dielectric constant,which was measured to be about 2.6, was only 0.1. This has proved theexcellent heat resistance of the fluorinated amorphous carbon filmaccording to the second embodiment.

[0104] Although the second embodiment has used1,1,1,3,3-pentafluoropropene as the fluorinated carbon compound having adouble bond of carbon atoms in a molecule thereof and containing ahydrogen atom, it is also possible to use 1H, 1H, 2H-perfluorohexen, 1H,1H, 2H-perfluoro-1-octene, trifluoroethylene, or 3,3,3-trifluoropropeneinstead.

[0105] Although the second embodiment has used the fluorinated carboncompound having a double bond of carbon atoms in a molecule thereof andcontaining a hydrogen atom, it may also contain another component suchas N₂.

[0106] (Third Embodiment)

[0107] An interlayer insulating film according to a third embodiment isa fluorinated amorphous carbon film formed by inducing plasmapolymerization of a material having, as a main component,hexafluoropropene which is a fluorinated carbon compound having a doublebond of carbon atoms in a molecule thereof and containing no hydrogenatom.

[0108] Since the third embodiment has been implemented by replacing thematerial used in the second embodiment, a description will be given onlyto the material.

[0109] When hexafluoropropene is introduced into the reaction chamber11, it is partially decomposed and changed into a plasma, whilemonomers, ions, and radicals are generated as decomposition products andpolymerized to form the interlayer insulating film composed of theplasma polymerization film on the semiconductor substrate 12.

[0110] Since hexafluoropropene according to the third embodimentcontains no hydrogen atom, the resulting interlayer insulating film wasa fluorinated amorphous carbon film containing only carbon and fluorineatoms. The fluorinated amorphous carbon film had a dielectric constantof 2.3 immediately after deposition.

[0111] Since bonding in polymer composing the plasma polymerization filmalso tends to be three-dimensional in the third embodiment, the film hasa high glass transition temperature and excellent heat resistance.

[0112] To evaluate the heat resistance of the interlayer insulating filmaccording to the third embodiment, the semiconductor substrate 12 formedwith the fluorinated amorphous carbon film according to the thirdembodiment was held at a temperature 400° C. in vacuum for 1 hour. Thethickness and dielectric constant of the fluorinated amorphous carbonfilm were then measured, with the result that a reduction in filmthickness was only about 5% and an increase in dielectric constant,which was measured to be about 2.5, was only 0.2. This has proved theexcellent heat resistance of the fluorinated amorphous carbon filmaccording to the third embodiment. Since the fluorinated amorphouscarbon film according to the third embodiment contains no hydrogen atomand is composed only of a fluorinated carbon, it has higher heatresistance and a lower dielectric constant than the fluorinatedamorphous carbon film according to the second embodiment.

[0113] Although the third embodiment has used the fluorinated carboncompound having a double bond of carbon atoms in a molecule thereof andcontaining no hydrogen atom, it may also contain another component suchas N₂.

[0114] (Fourth Embodiment)

[0115] An interlayer insulating film according to a fourth embodiment isa fluorinated amorphous carbon film formed by inducing plasmapolymerization of a material having, as a main component,hexafluoro-1,3-butadiene which is a fluorinated compound having twodouble bonds of carbon atoms in a molecule thereof and containing nohydrogen atom.

[0116] Since the fourth embodiment has been implemented by replacing thematerial used in the second embodiment, a description will be given onlyto the material.

[0117] When hexafluoro-1,3-butadiene represented by the followingChemical Formula 3 is introduced into the reaction chamber 11, it ispartially decomposed to generate monomers, ions, and radicals asdecomposition products, which are polymerized to form the interlayerinsulating film composed of the plasma polymerization film on thesemiconductor substrate 12:

[0118] In the fourth embodiment, since hexafluoro-1,3-butadiene has twodouble bonds of carbon atoms in a molecule thereof, the two double bondspartially decomposed in a plasma generate radicals each having fourunoccupied bonds, as shown by the following Chemical Formula 4, whichundergo polymerization:

[0119] As a consequence, bonding in polymer composing the plasmapolymerization film positively becomes three-dimensional, so that thecrosslinking density and glass transition temperature of the resultinginterlayer insulating film become higher than in the second and thirdembodiments, resulting in improved heat resistance.

[0120] Although the fourth embodiment has used the fluorinated carboncompound having two double bonds of carbon atoms in a molecule thereofand containing no hydrogen atom, it may also contain another componentsuch as N₂.

[0121] (Fifth Embodiment)

[0122] An interlayer insulating film according to a fifth embodiment isa fluorinated amorphous carbon film formed by inducing plasmapolymerization of a material having, as a main component,3,3,3-trifluoropropyne which is a fluorinated carbon compound having atriple bond of carbon atoms in a molecule thereof and containing ahydrogen atom.

[0123] Since the fifth embodiment has been implemented by replacing thematerial used in the second embodiment, a description will be given onlyto the material.

[0124] When 3,3,3-trifluoropropyne (CF₃C≡CH) is introduced into thereaction chamber 11, it is partially decomposed to generate monomers,ions, and radicals as decomposition products, which are polymerized toform the interlayer insulating film composed of the plasmapolymerization film on the semiconductor substrate 12.

[0125] In the fifth embodiment, since 3,3,3-trifluoropropyne contains ahydrogen atom, the resulting interlayer insulating film is a fluorinatedamorphous carbon film containing a hydrogen atom as well as carbon andfluorine atoms. The fluorinated amorphous carbon film had a dielectricconstant of 2.5 immediately after deposition.

[0126] In the fifth embodiment, since 3,3,3-trifluoropropyne has atriple bond of carbon atoms in a molecule thereof, as shown by thefollowing Chemical Formula 5, the triple bond partially decomposed inthe plasma generate radicals each having four unoccupied bonds, as shownin the following Chemical Formula 6, which undergo polymerization:

[0127] As a consequence, bonding in polymer composing the plasmapolymerization film positively becomes three-dimensional, so that thecrosslinking density and glass transition temperature of the resultinginterlayer insulating film become higher than in the second and thirdembodiments, resulting in improved heat resistance.

[0128] To evaluate the heat resistance of the interlayer insulating filmaccording to the fifth embodiment, the semiconductor substrate 12 formedwith the fluorinated amorphous carbon film according to the fifthembodiment was held at a temperature of 400° C. in vacuum for 1 hour.The thickness and dielectric constant of the fluorinated amorphouscarbon film were then measured, with the result that a reduction in filmthickness was only about 5% and an increase in dielectric constant,which was measured to be about 2.6, was only 0.1. This has proved theexcellent heat resistance of the fluorinated amorphous carbon filmaccording to the fifth embodiment.

[0129] Although the fifth embodiment has used 3,3,3-trifluoropropyne asthe fluorinated carbon compound having a triple bond of carbon atoms ina molecule thereof and containing a hydrogen atom,perfluoro(t-butyl)acetylene (HC≡CC(CF₃)₃) may be used instead.

[0130] Although the fifth embodiment has used the fluorinated carboncompound having a triple bond of carbon atoms in a molecule thereof andcontaining a hydrogen atom, it may also contain another component suchas N₂.

[0131] (Sixth Embodiment)

[0132] An interlayer insulating film according to a sixth embodiment isa fluorinated amorphous carbon film formed by inducing plasmapolymerization of a material having, as a main component,hexafluoro-2-butyne which is a fluorinated carbon compound having atriple bond of carbon atoms in a molecule thereof and containing nohydrogen atom.

[0133] Since the sixth embodiment has been implemented by replacing thematerial used in the second embodiment, a description will be given onlyto the material.

[0134] When hexafluoro-2-butyne (CF₃C≡CCF₃) is introduced into thereaction chamber 11, it is partially decomposed to generate monomers,ions, and radicals as decomposition products, which are polymerized toform the interlayer insulating film composed of the plasmapolymerization film on the semiconductor substrate 12.

[0135] In the sixth embodiment, since hexafluoro-2-butyne contains nohydrogen atom, the resulting interlayer insulating film is a fluorinatedamorphous carbon film containing only carbon and fluorine atoms. Thefluorinated amorphous carbon film had a dielectric constant of 2.3immediately after deposition.

[0136] In the sixth embodiment, since hexafluoro-2-butyne has a triplebond of carbon atoms in a molecule thereof, similarly to3,3,3-trifluoropropyne represented by the foregoing Chemical Formula 5,the triple bond partially decomposed in a plasma generate radicals eachhaving four unoccupied bonds, similarly to the case of3,3,3-trifluoropropyne, which undergo polymerization. As a consequence,bonding in polymer composing the plasma polymerization film positivelybecomes three-dimensional, so that the crosslinking density and glasstransition temperature of the resulting interlayer insulating filmbecome higher than in the second and third embodiments, resulting inimproved heat resistance.

[0137] To evaluate the heat resistance of the interlayer insulating filmaccording to the sixth embodiment, the semiconductor substrate 12 formedwith the fluorinated amorphous carbon film according to the sixthembodiment was held at a temperature of 400° C. in vacuum for 1 hour.The thickness and dielectric constant of the flourinated amorphouscarbon film were then measured, with the result that a reduction in filmthickness was only about 5% and an increase in dielectric constant,which was measured to be about 2.4, was only 0.1. This has proved theexcellent heat resistance of the fluorinated amorphous carbon filmaccording to the sixth embodiment.

[0138] Although the fifth embodiment has used the fluorinated carboncompound having a triple bond of carbon atoms in a molecule thereof andcontaining no hydrogen atom, it may also contain another component suchas N₂.

[0139] (Seventh Embodiment)

[0140] An interlayer insulating film according to a seventh embodimentis a fluorinated amorphous carbon film formed by inducing plasmapolymerization of a material having, as a main component,perfluorodecalin which is a fluorinated carbon compound having apolycyclic structure (condensed cyclic structure) in a molecule thereofand containing no hydrogen atom.

[0141] Since the seventh embodiment has been implemented by replacingthe material used in the second embodiment, a description will be givenonly to the material.

[0142] When perfluorodecalin represented by the following ChemicalFormula 7 is introduced into the reaction chamber 11, it is partiallydecomposed to generate monomers, ions, and radicals as decompositionproducts, which are polymerized to form the interlayer insulating filmmade of the plasma polymerization film on the semiconductor substrate12:

[0143] In the seventh embodiment, since perfluorodecalin contains nohydrogen atom, the resulting interlayer insulating film is a fluorinatedamorphous carbon film containing only carbon and fluorine atoms. Thefluorinated amorphous carbon film had a dielectric constant of 2.3immediately after deposition.

[0144] In the seventh embodiment, since perfluorodecalin has apolycyclic structure (condensed structure) in a molecule thereof, asshown by the foregoing Chemical Formula 7, the polycyclic structurepartially decomposed in a plasma generate radicals each having fourunoccupied bonds, as shown in the following Chemical Formula 8, whichundergo polymerization:

[0145] As a consequence, bonding in polymer composing the plasmapolymerization film positively becomes three-dimensional, so that thecrosslinking density and glass transition temperature of the resultinginterlayer insulating film become higher than in the second and thirdembodiments, resulting in improved heat resistance.

[0146] To evaluate the heat resistance of the interlayer insulating filmaccording to the seventh embodiment, the semiconductor substrate 12formed with the fluorinated amorphous carbon film according to theseventh embodiment was held at a temperature of 400° C. in vacuum for 1hour. The thickness and dielectric constant of the fluorinated amorphouscarbon film were then measured, with the result that a reduction in filmthickness was only about 5% and an increase in dielectric constant,which was measured to be about 2.4, was only 0.1. This has proved theexcellent heat resistance of the fluorinated amorphous carbon filmaccording to the seventh embodiment.

[0147] Although the seventh embodiment has used perfluorodecalin as thefluorinated carbon compound having a polycyclic structure in a moleculethereof and containing no hydrogen atom, a fluorinated carbon compoundhaving a condensed cyclic structure such as perfluorofluorenerepresented by the following Chemical Formula 9,perfluoro-1-methyldecalin represented by the following Chemical Formula10, perfluoro(tetradecahydrophenanthrene) represented by the followingChemical Formula 11 may be used instead:

[0148] Alternatively, it is also possible to use a fluorinated carboncompound having a normal polycyclic structure such as perfluorobiphenylrepresented by the following Chemical Formula 12:

[0149] (Eighth Embodiment)

[0150] An interlayer insulating film according to an eighth embodimentis a silicon oxide film containing a fluorinated carbon formed byinducing plasma polymerization of a material containing, as a maincomponent, a gas mixture of phenyltrimethoxysilane which is an organicsilicon compound represented by the following general formula:

R¹ _(x)Si(OR²)_(4−x)

[0151] (where R¹ is a phenyl group or a vinyl group; R² is an alkylgroup; and x is an integer of 1 to 3) and a benzene derivative having aF-C bond which is a fluorinated carbon compound.

[0152] A description will be given to a method of forming the interlayerinsulating film according to the eighth embodiment.

[0153] First, the semiconductor substrate 12 is placed on the samplestage 13 heated to, e.g., 400° C. and grounded by the change-over switch14 and then the reaction chamber 11 is evacuated by the vacuum pump 26 .

[0154] Next, carrier gas composed of, e.g., argon is supplied at a flowrate of 200 cc/min to the first container 24 containing thereinphenyltrimethoxysilane represented by the foregoing Chemical Formula 1,so that bubbled phenyltrimethoxysilane is introduced into the reactionchamber 11. Meanwhile, carrier gas composed of, e.g., argon is suppliedat a flow rate of 200 cc/min to the second container 25 containingtherein difluorobenzene which is a benzene derivative having a F-C bondrepresented by the following Chemical Formula 13 so that bubbleddifluorobenzene is introduced into the reaction chamber 11:

[0155] Next, the pressure inside the reaction chamber 11 is set to about1.0 Torr and RF power of 600 W at a frequency of 13.56 MHz is appliedfrom the second RF power source 17 to the shower head 16 serving as theupper electrode. During the process, phenyltrimethoxysilane gas anddifluorobenzene are partially decomposed to generate monomers, ions, andradicals as decomposition products, which are polymerized to form theinterlayer insulating film composed of the plasma polymerization film onthe semiconductor substrate 12. The structure of the plasmapolymerization film is diagrammatically shown by the following ChemicalFormula 14:

[0156] Since the interlayer insulating film according to the eighthembodiment is formed by plasma CVD, it is unnecessary to repeatedlyperform the steps of applying the organic SOG agent and thermally curingthe applied SOG agent several times, resulting in improved filmformability and lower cost.

[0157] The dielectric constant of the interlayer insulating filmaccording to the eighth embodiment was as low as about 2.5. After theinterlayer insulating film was allowed to stand at room temperature forabout 2 weeks, the dielectric constant thereof was measured again to beabout 2.7, which indicates stable film quality scarcely varying withtime. Thus, according to the eighth embodiment, there can be formed theinterlayer insulating film with improved film formability and a reduceddielectric constant.

[0158] The density of leakage currents was also measured to be about4.5×10⁻⁸ A/cm² at 5 MV/cm, which was satisfactory.

[0159] Although the pressure inside the reaction chamber 11 has been setto about 1.0 Torr, it is not limited thereto but may be set at any valuewithin the range of 100 mTorr to 20 Torr. More preferably, the pressureinside the reaction chamber 11 is within the range of 0.5 to 5.0 Torr.

[0160] The RF power applied to the shower head 16 as the upper electrodemay have any value within the range of 100 to 1000 W. More preferably,the RF power has a value within the range of 250 to 500 W.

[0161] Although the semiconductor substrate 12 may be heated to anytemperature within the range of 25 to 500° C., similarly to the firstembodiment, it is preferably heated to a temperature within the range of200 to 400° C.

[0162] As compounds represented by the foregoing general formula: R¹_(x)Si(OR²)_(4−x) where R¹ is a phenyl group, there can be listeddiphenyldimethoxysilane in addition to pheryltrimethoxysilane. Ascompounds represented by the foregoing general formula: R¹_(x)Si(OR²)_(4−x) where R¹ is a vinyl group, there can be listedvinyltrimethoxysilane and divinyldimethoxysilane.

[0163] As the benzene derivative having a F—C bond which is afluorinated carbon compound, benzene fluoride such as fluorobenzene orhexafluorobenzene may be used instead of difluorobenzene.

[0164] (Ninth Embodiment)

[0165] An interlayer insulating film according to a ninth embodiment isa silicon oxide film containing a fluorinated carbon formed by inducingplasma polymerization of a material containing, as a main component, agas mixture of phenyltrimethoxysilane which is an organic siliconcompound represented by the following general formula:

R¹ _(x)Si(OR²)_(4−x)

[0166] (where R¹ is a phenyl group or a vinyl group; R² is an alkylgroup; and x is an integer of 1 to 3) and C₂F₆ which is a fluorinatedcarbon compound.

[0167] A description will be given to a method of forming the interlayerinsulating film according to the ninth embodiment.

[0168] First, the semiconductor substrate 12 is placed on the samplestage 13 heated to, e.g., 400° C. and grounded by the change-over switch14 and then the reaction chamber 11 is evacuated by the vacuum pump 26.

[0169] Next, carrier gas composed of, e.g., argon is supplied at a flowrate of 200 cc/min to the first container 24 containing thereinphenyltrimethoxysilane so that bubbled phenyltrimethoxysilane isintroduced into the reaction chamber 11, while C₂F₆ gas is introducedinto the reaction chamber 11 through the third gas supply line 23.

[0170] Next, the pressure inside the reaction chamber 11 is set to about1.0 Torr and RF power of 700 W at a frequency of 13.56 MHz is appliedfrom the second RF power source 17 to the shower head 16 serving as theupper electrode. During the process, phenyltrimethoxysilane gas and C₂F₆are partially decomposed to generate monomers, ions, and radicals asdecomposition products, which are polymerized to form the interlayerinsulating film composed of the plasma polymerization film on thesemiconductor substrate 12. The structure of the plasma polymerizationfilm is diagrammatically shown by the following Chemical Formula 15:

[0171] Since the interlayer insulating film according to the ninthembodiment is formed by plasma CVD, it is unnecessary to repeatedlyperform the steps of applying the organic SOG agent and thermally curingthe applied SOG agent several times, resulting in improved filmformability and lower cost.

[0172] The dielectric constant of the interlayer insulating filmaccording to the ninth embodiment was as low as about 2.9. After theinterlayer insulating film was allowed to stand at room temperature forabout 2 weeks, the dielectric constant thereof was measured again to beabout 3.0, which indicates stable film quality scarcely varying withtime. Thus, according to the ninth embodiment, there can be formed theinterlayer insulating film with improved film formability and a reduceddielectric constant.

[0173] The density of leakage currents was also measured to be about5.5×10⁻⁸ A/cm² at 5 MV/cm, which was satisfactory.

[0174] Although the pressure inside the reaction chamber 11 has been setto about 1.0 Torr, it is not limited thereto but may be set at any valuewithin the range of 100 mTorr to 20 Torr. More preferably, the pressureinside the reaction chamber 11 is within the range of 0.5 to 5.0 Torr.

[0175] The RF power applied to the shower head 16 as the upper electrodemay have any value within the range of 100 to 2000 W. More preferably,the RF power has a value within the range of 300 to 750 W.

[0176] Although the semiconductor substrate 12 may be heated to anytemperature within the range of 25 to 500° C., it is preferably heatedto a temperature within the range of 200 to 400° C.

[0177] As compounds represented by the foregoing general formula: R¹_(x)Si(OR²)_(4−x) where R¹ is a phenyl group, there can be listeddiphenyldimethoxysilane in addition to phenyltrimethoxysilane. Ascompounds represented by the foregoing general formula: R¹_(x)Si(OR²)_(4−x) where R¹ is a vinyl group, there can be listedvinyltrimethoxysilane and divinyldimethoxysilane.

[0178] As the fluorinated carbon compound, CF₄, C₄F₈, or the like may beused instead of C₂F₆.

[0179] Although the ninth embodiment has formed the interlayerinsulating film composed of the plasma polymerization film by causingthe material having, as a main component, an organic silicon compoundrepresented by the general formula R¹ _(x)Si(OR²)_(4−x) to undergoplasma polymerization, the interlayer insulating film may also be formedby causing the material having, as a main component, an organic siliconcompound represented by the following general formula:

R¹ _(x)SiH_(4−x)

[0180] (where R¹ is a phenyl group or a vinyl group; and x is an integerof 1 to 3) to undergo plasma polymerization or by causing the materialhaving, as a main component, an organic silicon compound represented bythe foregoing general formula:

R¹ _(x)Si(OR²)_(4−x)

[0181] or by the foregoing general formula:

R¹ _(x)SiH_(4−x)

[0182] to react with an oxidizing agent made of, e.g., O₂ or H₂O. Inthis case, O₂ gas or H₂O gas as well as C₂F₆ gas is introduced into thereaction chamber 11 through the third gas supply line 23.

[0183] As compounds represented by the foregoing general formula: R¹_(x)SiH_(4−x) where R¹ is a phenyl group, there may be listedphenylsilane and diphenylsilane. As compounds represented by theforegoing general formula: R¹ _(x)SiH_(4−x) where R¹ is a vinyl group,there may be listed vinylsilane or divinylsilane.

[0184] (Tenth Embodiment)

[0185] An interlayer insulating film according to a tenth embodiment isa silicon oxide film containing a fluorinated carbon formed by inducingplasma polymerization of a material containing, as a main component, agas mixture of phenyltrimethoxysilane which is an organic siliconcompound represented by the following general formula:

R¹ _(x)Si(OR²)_(4−x)

[0186] (where R¹ is a phenyl group or a vinyl group; R² is an alkylgroup; and x is an integer of 1 to 3) and perfluorodecalin which is thefluorinated carbon compound represented by the foregoing ChemicalFormula 7.

[0187] A description will be given to a method of forming the interlayerinsulating film according to the tenth embodiment.

[0188] First, the semiconductor substrate 12 is placed on the samplestage 13 heated to, e.g., 400° C. and grounded by the change-over switch14 and then the reaction chamber 11 is evacuated by the vacuum pump 26.

[0189] Next, carrier gas composed of, e.g., argon is supplied at a flowrate of 280 cc/min to the first container 24 containing thereinphenyltrimethoxysilane so that bubbled phenyltrimethoxysilane isintroduced into the reaction chamber 11. Meanwhile, carrier gas composedof, e.g., argon is supplied at a flow rate of 42 cc/min to the secondcontainer 25 containing therein perfluorodecalin so that bubbledperfluorodecalin is introduced into the reaction chamber 11.

[0190] Next, the pressure inside the reaction chamber 11 is set to about2.0 Torr and RF power of 500 W at a frequency of 13.56 MHz is appliedfrom the second RF power source 17 to the shower head 16 serving as theupper electrode. During the process, phenyltrimethoxysilane gas andperfluorodecalin are partially decomposed to generate monomers, ions,and radicals as decomposition products, which are polymerized to formthe interlayer insulating film made of the plasma polymerization film onthe semiconductor substrate 12.

[0191] Since the interlayer insulating film according to the tenthembodiment is formed by plasma CVD, it is unnecessary to repeatedlyperform the steps of applying the organic SOG agent and thermally curingthe applied SOG agent several times, resulting in improved filmformability and lower cost.

[0192] The dielectric constant of the interlayer insulating filmaccording to the tenth embodiment was as low as about 2.6. After theinterlayer insulating film was allowed to stand at room temperature forabout 2 weeks, the dielectric constant thereof was measured again to beabout 2.7, which indicates stable film quality scarcely varying withtime. Thus, according to the tenth embodiment, there can be formed theinterlayer insulating film with improved film formability and a reduceddielectric constant.

[0193] Moreover, the interlayer insulating film had a glass transitiontemperature of 430° C. or more, which indicates excellent heatresistance.

[0194] Although the pressure inside the reaction chamber 11 has been setto about 1.0 Torr, it is not limited thereto but may be set at any valuewithin the range of 100 mtorr to 20 Torr. More preferably, the pressureinside the reaction chamber 11 is within the range of 0.5 to 5.0 Torr.

[0195] The RF power applied to the shower head 16 as the upper electrodemay have any value within the range of 100 to 1000 W. More preferably,the RF power has a value within the range of 250 to 500 W.

[0196] Although the semiconductor substrate 12 may be heated to anytemperature within the range of 25 to 500° C., similarly to the firstembodiment, it is preferably heated to a temperature within the range of200 to 400° C.

[0197] As compounds represented by the foregoing general formula: R¹_(x)Si(OR²)_(4−x) where R¹ is a phenyl group, there may be listeddiphenyldimethoxysilane in addition to phenyltrimethoxysilane. Ascompounds represented by the foregoing general formula: R¹_(x)Si(OR²)_(4−x) where R¹ is a vinyl group, there may be listedvinyltrimethoxysilane and divinyldimethoxysilane.

[0198] The fluorinated carbon compound is not limited toperfluorodecalin but those shown in the second to seventh embodimentsmay be used properly.

[0199] (Eleventh Embodiment)

[0200] An interlayer insulating film according to an eleventh embodimentis a silicon oxide film containing a fluorinated carbon formed byinducing plasma polymerization of a material containing, as a maincomponent, a gas mixture of hexamethyldisiloxane which is a siloxanederivative and perfluorodecalin which is the fluorinated carbon compoundrepresented by the foregoing Chemical Formula 7.

[0201] A description will be given to a method of forming the interlayerinsulating film according to the eleventh embodiment.

[0202] First, the semiconductor substrate 12 is placed on the samplestage 13 heated to, e.g., 400° C. and grounded by the change-over switch14 and then the reaction chamber 11 is evacuated by the vacuum pump 26.

[0203] Next, carrier gas composed of, e.g., argon is supplied at a flowrate of 28 cc/min to the first container 24 containing thereinhexamethyldisiloxane so that bubbled hexamethyldisiloxane is introducedinto the reaction chamber 11. Meanwhile, carrier gas composed of, e.g.,argon is supplied at a flow rate of 280 cc/min to the second container25 containing therein perfluorodecalin so that bubbled perfluorodecalinis introduced into the reaction chamber 11.

[0204] Next, the pressure inside the reaction chamber 11 is set to about0.8 Torr and RF power of 250 W at a frequency of 13.56 MHz is appliedfrom the second RF power source 17 to the shower head 16 serving as theupper electrode. During the process, hexamethyldisiloxane andperfluorodecalin are partially decomposed to generate monomers, ions,and radicals as decomposition products, which are polymerized to formthe interlayer insulating film composed of the plasma polymerizationfilm on the semiconductor substrate 12.

[0205] Since the interlayer insulating film according to the eleventhembodiment is formed by plasma CVD, it is unnecessary to repeatedlyperform the steps of applying the organic SOG agent and thermally curingthe applied SOG agent several times, resulting in improved filmformability and lower cost.

[0206] The dielectric constant of the interlayer insulating filmaccording to the eleventh embodiment was as low as about 2.75. After theinterlayer insulating film was allowed to stand at room temperature forabout 2 weeks, the dielectric constant thereof was measured again to beabout 2.8, which indicates stable film quality scarcely varying withtime. Thus, according to the eleventh embodiment, there can be formedthe interlayer insulating film with improved film formability and areduced dielectric constant.

[0207] Moreover, the interlayer insulating film had a glass transitiontemperature of 430° C. or more, which indicates excellent heatresistance.

[0208] Although the pressure inside the reaction chamber 11 has been setto about 0.8 Torr, it is not limited thereto but may be set at any valuewithin the range of 100 mTorr to 20 Torr; More preferably, the pressureinside the reaction chamber 11 is within the range of 0.5 to 5.0 Torr.

[0209] The RF power applied to the shower head 16 as the upper electrodemay have any value within the range of 100 to 1000 W. More preferably,the RF power has a value within the range of 250 to 500 W.

[0210] Although the semiconductor substrate 12 may be heated to anytemperature within the range of 25 to 500° C., similarly to the firstembodiment, it is preferably heated to a temperature within the range of200 to 400° C.

[0211] As the siloxane derivative, 1,1,3,3-tetramethyldisiloxane(H(CH₃)₂Si—O—Si(CH₃)₂H, 1,3,5,7-tetramethylcyclotetrasiloxanerepresented by the following Chemical Formula 16, or the like may beused instead of hexamethyldisloxane:

[0212] The fluorinated carbon compound is not limited toperfluorodecalin but those shown in the second to seventh embodimentsmay be used properly.

[0213] Although the eleventh embodiment has formed the interlayerinsulating film composed of the plasma polymerization film by causingthe material having the siloxane derivative as the main component toundergo plasma polymerization, the interlayer insulating film may alsobe formed by causing the material having the siloxane derivative as themain component to react with an oxidizing agent made of, e.g., O₂ orH₂O. In this case, O₂ gas, H₂O gas, or the like is introduced into thereaction chamber 11 through the third gas supply line 23.

[0214] Although the argon gas has been used as the carrier gas in eachof the first to eleventh embodiments, hydrogen, nitrogen, or helium mayalso be used properly instead of the argon gas.

[0215] Although the sample stage 13 as the lower electrode has beengrounded in each of the first to eleventh embodiments, if the RF poweris applied from the first RF power source 15 to the sample stage 13 byusing the change-over switch 14, a plasma composed of a reactive gasgenerated in the reaction chamber 11 can be supplied efficiently to thesample stage 13, so that the speed at which the interlayer insulatingfilm is formed is increased about two- to five-fold.

We claim:
 1. A method of forming an interlayer insulating film, whereina material containing, as a main component, an organic silicon compoundrepresented by the following general formula: R¹ _(x)Si(OR²)_(4−x)(where R¹ is a phenyl group or a vinyl group; R² is an alkyl group; andx is an integer of 1 to 3) is caused to undergo plasma polymerization orreact with an oxidizing agent to form an interlayer insulating filmcomposed of a silicon oxide film containing an organic component.
 2. Amethod of forming an interlayer insulating film according to claim 1,wherein said organic silicon compound is phenyltrimethoxysilane ordiphenyldimethoxysilane.
 3. A method of forming an interlayer insulatingfilm according to claim 1, wherein said organic silicon compound isvinyltrimethoxysilane or divinyldimethoxysilane.
 4. A method of formingan interlayer insulating film, wherein a material containing, as a maincomponent, an organic silicon compound represented by the followinggeneral formula: R¹ _(x)SiH_(4−x) (where R¹ is a phenyl group or a vinylgroup; and x is an integer of 1 to 3) is caused to undergo plasmapolymerization or react with an oxidizing agent to form an interlayerinsulating film composed of a silicon oxide film containing an organiccomponent.
 5. A method of forming an interlayer insulating filmaccording to claim 4, wherein said organic silicon compound isphenylsilane or diphenylsilane.
 6. A method of forming an interlayerinsulating film according to claim 4, wherein said organic siliconcompound is vinylsilane or divinylsilane.
 7. A method of forming aninterlayer insulating film, wherein a material containing, as a maincomponent, a fluorinated carbon compound having two or more double bondsof carbon atoms in a molecule thereof is caused to undergo plasmapolymerization to form an interlayer insulating film composed of afluorinated amorphous carbon film.
 8. A method of forming an interlayerinsulating film according to claim 7, wherein said fluorinated carboncompound is composed only of carbon atoms and fluorine atoms.
 9. Amethod of forming an interlayer insulating film according to claim 8,wherein said fluorinated carbon compound is hexafluoro-1,3-butadiene.10. A method of forming an interlayer insulating film, wherein amaterial containing, as a main component, a fluorinated carbon compoundhaving a triple bond of carbon atoms in a molecule thereof is caused toundergo plasma polymerization to form an interlayer insulating filmcomposed of a fluorinated amorphous carbon film.
 11. A method of formingan interlayer insulating film according to claim 10, wherein saidfluorinated carbon compound is composed only of carbon atoms andfluorine atoms.
 12. A method of forming an interlayer insulating filmaccording to claim 11, wherein said fluorinated carbon compound ishexafluoro-2-butyne.
 13. A method of forming an interlayer insulatingfilm, wherein a material containing, as a main component, a fluorinatedcarbon compound having a polycyclic structure in a molecule thereof iscaused to undergo plasma polymerization to form an interlayer insulatingfilm composed of a fluorinated amorphous carbon film.
 14. A method offorming an interlayer insulating film according to claim 13, whereinsaid fluorinated carbon compound is composed only of carbon atoms andfluorine atoms.
 15. A method of forming an interlayer insulating filmaccording to claim 13, wherein said fluorinated carbon compound has acondensed cyclic structure in the molecule thereof.
 16. A method offorming an interlayer insulating film according to claim 15, whereinsaid fluorinated carbon compound is perfluorodecalin, perfluorofluorene,or perfluoro(tetradecahydrophenanthrene).
 17. A method of forming aninterlayer insulating film, wherein a material containing, as a maincomponent, a gas mixture of an organic silicon compound composed of acompound represented by the following general formula: R¹_(x)Si(OR²)_(4−x) (where R¹ is a phenyl group or a vinyl group; R² is analkyl group; and x is an integer of 1 to 3) or of a siloxane derivativeand a fluorinated carbon compound is caused to undergo plasmapolymerization or react with an oxidizing agent to form an interlayerinsulating film composed of a silicon oxide film containing afluorinated carbon.
 18. A method of forming an interlayer insulatingfilm, wherein a material containing, as a main component, a gas mixtureof an organic silicon compound and a fluorinated carbon compound havingtwo or more double bonds of carbon atoms in a molecule thereof is causedto undergo plasma polymerization or react with an oxidizing agent toform an interlayer insulating film composed of a silicon oxide filmcontaining a fluorinated carbon.
 19. A method of forming an interlayerinsulating film according to claim 18, wherein said organic siliconcompound is composed of a compound represented by the following generalformula: R¹ _(x)Si(OR²)_(4−x) (where R¹ is a phenyl group or a vinylgroup; R² is an alkyl group; and x is an integer of 1 to 3) or of asiloxane derivative.
 20. A method of forming an interlayer insulatingfilm, wherein a material containing, as a main component, a gas mixtureof an organic silicon compound and a fluorinated carbon compound havinga triple bond of carbon atoms in a molecule thereof is caused to undergoplasma polymerization or react with an oxidizing agent to form aninterlayer insulating film composed of a silicon oxide film containing afluorinated carbon.
 21. A method of forming an interlayer insulatingfilm according to claim 20, wherein said organic silicon compound iscomposed of a compound represented by the following general formula: R¹_(x)Si(OR²)_(4−x) (where R¹ is a phenyl group or a vinyl group; R² is analkyl group; and x is an integer of 1 to 3) or of a siloxane derivative.22. A method of forming an interlayer insulating film, wherein amaterial containing, as a main component a gas mixture of an organicsilicon compound and a fluorinated carbon compound having a polycyclicstructure is caused to undergo plasma polymerization or react with anoxidizing agent to form an interlayer insulating film composed of asilicon oxide film containing a fluorinated carbon.
 23. A method offorming an interlayer insulating film according to claim 22, whereinsaid organic silicon compound is composed a compound represented by thefollowing general formula: R¹ _(x)Si(OR²)_(4−x) (where R¹ is a phenylgroup or a vinyl group; R² is an alkyl group; and x is an integer of 1to 3) or of a siloxane derivative.